SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND CONNECTION MATERIAL

摘要

When Sn-Ag-based or Sn-Cu-based lead-free solder is used in the semiconductor element junction of a power semiconductor module, extending the lifespan has been difficult due to the formation of a gap at the soldered section due to the current being switched on or off. The connection material of the power semiconductor module is used to form a junction in a semiconductor element having a stacked Ni/Cu/Ni/Sn structure, whereby a finer metal compound is obtained to improve thermal shock resistance, as well as to minimize the formation of a gap inside the solder junction that accompanies the switching on and off of the current and to obtain enhanced reliability.