发明名称 PHOTOSENSITIVE RESIN COMPOSITION, CURED RELIEF PATTERN-MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a positive photosensitive resin composition for giving a cured relief pattern with a good shape, which can be cured at low-temperature and prevents a pattern from being buried due to collapse of a relief pattern after curing; a cured relief pattern-formation method to form a pattern using the photosensitive resin composition; and a semiconductor device and a display device having the cured relief pattern.SOLUTION: A photosensitive resin composition comprises 100 pts.mass of a phenol resin mixture (A) comprising a phenol resin (A-1) having a structure represented by the formula (1) [in the formula, a, Rand X are as defined in the description] and at least one phenol resin (A-2) selected from a novolac resin or a polyhydroxystyrene resin at a mass ratio of 10/90 to 90/10; 0.1 to 70 pts.mass of a photosensitive diazonaphthoquinone compound (B); and 100 pts.mass to 1000 pts.mass of a solvent (C).
申请公布号 JP2013190702(A) 申请公布日期 2013.09.26
申请号 JP20120058027 申请日期 2012.03.14
申请人 ASAHI KASEI E-MATERIALS CORP 发明人 OKUDA TOSHIAKI;SASAKI TAKAHIRO
分类号 G03F7/023;C08G8/10;G03F7/022;H01L21/027 主分类号 G03F7/023
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