发明名称 |
PHOTOSENSITIVE RESIN COMPOSITION, CURED RELIEF PATTERN-MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive photosensitive resin composition for giving a cured relief pattern with a good shape, which can be cured at low-temperature and prevents a pattern from being buried due to collapse of a relief pattern after curing; a cured relief pattern-formation method to form a pattern using the photosensitive resin composition; and a semiconductor device and a display device having the cured relief pattern.SOLUTION: A photosensitive resin composition comprises 100 pts.mass of a phenol resin mixture (A) comprising a phenol resin (A-1) having a structure represented by the formula (1) [in the formula, a, Rand X are as defined in the description] and at least one phenol resin (A-2) selected from a novolac resin or a polyhydroxystyrene resin at a mass ratio of 10/90 to 90/10; 0.1 to 70 pts.mass of a photosensitive diazonaphthoquinone compound (B); and 100 pts.mass to 1000 pts.mass of a solvent (C). |
申请公布号 |
JP2013190702(A) |
申请公布日期 |
2013.09.26 |
申请号 |
JP20120058027 |
申请日期 |
2012.03.14 |
申请人 |
ASAHI KASEI E-MATERIALS CORP |
发明人 |
OKUDA TOSHIAKI;SASAKI TAKAHIRO |
分类号 |
G03F7/023;C08G8/10;G03F7/022;H01L21/027 |
主分类号 |
G03F7/023 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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