PHOTORESIST COMPOSITION, RESIST PATTERN-FORMATION METHOD, POLYMER AND COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide a photoresist composition allowing formation of a resist pattern excellent in LWR performance and MEEF performance.SOLUTION: A photoresist composition contains [A] a polymer having a structural unit (I) represented by Formula (1) and [B] an acid generator. The [A] polymer preferably has further a structural unit (II) represented by Formula (2). In Formula (2), R, Rand Ris an alkyl group having a carbon number of 1 to 4 or a monovalent alicyclic group having a carbon number of 4 to 20.