| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improving the avalanche resistance at the time of breakdown.SOLUTION: A semiconductor device includes: an IGBT element formation region that has a semiconductor substrate of a first conductivity type and an emitter electrode; and a guard ring formation region that has a fourth semiconductor region of a second conductivity type provided on one side of surfaces of the semiconductor substrate around the IGBT element formation region and a fifth semiconductor region provided deeper than the fourth semiconductor region and provided between the IGBT element formation region and the fourth semiconductor region, and is connected to the emitter electrode. |
