发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS |
摘要 |
A method of manufacturing a semiconductor device includes: forming a first conductive film on a substrate; forming an insulating film to cover the conductive film; etching the insulating film to form an opening portion to expose at least a portion of the first conductive film in the insulating film; irradiating the opening portion with ultraviolet rays in a reduction gas atmosphere; forming a barrier metal film in the opening portion; and forming a second conductive film on the barrier metal film.
|
申请公布号 |
US2013247825(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201313896482 |
申请日期 |
2013.05.17 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
OWADA TAMOTSU |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|