发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS
摘要 A method of manufacturing a semiconductor device includes: forming a first conductive film on a substrate; forming an insulating film to cover the conductive film; etching the insulating film to form an opening portion to expose at least a portion of the first conductive film in the insulating film; irradiating the opening portion with ultraviolet rays in a reduction gas atmosphere; forming a barrier metal film in the opening portion; and forming a second conductive film on the barrier metal film.
申请公布号 US2013247825(A1) 申请公布日期 2013.09.26
申请号 US201313896482 申请日期 2013.05.17
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 OWADA TAMOTSU
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址