发明名称 Direct Contact Package for Power Transistors
摘要 Some exemplary embodiments of a direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold compound. A first semiconductor device is attached to a top side of the paddle portion and is enclosed by said mold compound, while a second semiconductor device is attached to a bottom side of said paddle portion and is in electrical contact with said the first semiconductor device. The extended contact lead frame portion is in direct electrical contact with the second semiconductor device without using a bond wire. Alternative exemplary embodiments may include additional extended lead frame portions, paddle portions, and semiconductor devices in various configurations.
申请公布号 US2013249072(A1) 申请公布日期 2013.09.26
申请号 US201313895694 申请日期 2013.05.16
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 CHO EUNG SAN
分类号 H01L23/495 主分类号 H01L23/495
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