| 摘要 |
The present invention is a resist pattern forming method comprising a step for forming a resist film using a photoresist composition, a step for exposing the resist film, and a step for developing the exposed resist film, the photoresist composition containing: an acid generator that generates a protonic acid when irradiated with exposure light; and a polymer that has a structural unit which contains a group (a) that forms a cationic group together with a proton, but does not substantially have a structural unit that contains an acid-cleavable group. It is preferable that the group (a) contains at least one atom that is selected from the group consisting of a nitrogen atom having an unshared electron pair and a phosphorus atom having an unshared electron pair. |
