| 摘要 |
The invention relates to a method for manufacturing a solar cell from a semiconductor substrate of a first conductivity type, the semiconductor substrate having a front side and a back side, the method comprising in this sequence: creating by diffusion of a dopant of a second conductivity type a second conductivity-type doped layer in the front side and the back side, during diffusion forming of a dopant containing glassy layer on the front and back side; removing the second conductivity-type doped layer and the dopant containing glassy layer from the back side by a single sided etching process, while maintaining the dopant-containing glassy layer in the front side; creating a Back Surface Field (BSF) layer of the first conductivity type on the back side by implantation of a dopant of the first conductivity type into the back side; removing the dopant containing glassy layer from the front side of said substrate by an etching process; surface oxidation by heating said substrate for a predetermined period of time and to a predetermined temperature in oxidizing atmosphere to form passivation layers on the front side and the back side. |
