发明名称 |
CHARGE-SHARING-TYPE PIXEL STRUCTURE |
摘要 |
<p>A charge-sharing-type pixel structure (1) comprises a first subpixel (11) and a second subpixel (12). Each of the subpixels comprises a transistor (TFT1, TFT2), and the second subpixel (12) additionally comprises a third transistor (TFTS) and a top gate electrode (TG). When the third transistor (TFTS) is opened, a liquid crystal capacitor (Clc1) of the first subpixel (11) changes the original gray-scale voltage by sharing charges with other capacitors. The top gate electrode (TG) changes the critical voltage of the third transistor (TFTS) in accordance with a bias signal, and then adjusts the change degree of the gray-scale voltage of the liquid crystal capacitor (Clc1) of the first subpixel (11).</p> |
申请公布号 |
WO2013139046(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
WO2012CN73082 |
申请日期 |
2012.03.27 |
申请人 |
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.;LO, SHIH-HSUN;SHIH, MINGHUNG |
发明人 |
LO, SHIH-HSUN;SHIH, MINGHUNG |
分类号 |
G02F1/1362;G02F1/1368 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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