发明名称 CHARGE-SHARING-TYPE PIXEL STRUCTURE
摘要 <p>A charge-sharing-type pixel structure (1) comprises a first subpixel (11) and a second subpixel (12). Each of the subpixels comprises a transistor (TFT1, TFT2), and the second subpixel (12) additionally comprises a third transistor (TFTS) and a top gate electrode (TG). When the third transistor (TFTS) is opened, a liquid crystal capacitor (Clc1) of the first subpixel (11) changes the original gray-scale voltage by sharing charges with other capacitors. The top gate electrode (TG) changes the critical voltage of the third transistor (TFTS) in accordance with a bias signal, and then adjusts the change degree of the gray-scale voltage of the liquid crystal capacitor (Clc1) of the first subpixel (11).</p>
申请公布号 WO2013139046(A1) 申请公布日期 2013.09.26
申请号 WO2012CN73082 申请日期 2012.03.27
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.;LO, SHIH-HSUN;SHIH, MINGHUNG 发明人 LO, SHIH-HSUN;SHIH, MINGHUNG
分类号 G02F1/1362;G02F1/1368 主分类号 G02F1/1362
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