发明名称 LOW-TEMPERATURE THERMISTOR MATERIAL AND METHOD FOR MANUFACTURING SAME
摘要 <p>A low-temperature thermistor material provided with a matrix material comprising an insulating ceramic of a nitride and/or an oxide, and conductive particles comprising alpha-SiC that are dispersed around the crystal grains of the matrix material to form a conductive path, wherein there are further added boron and second conductive particles having a specific resistivity at room temperature of less than that of the alpha-SiC, the second conductive particles comprising a metal with a melting point of at least 1700°C or an inorganic compound. This low-temperature thermistor material is obtained by mixing a matrix powder, a conductive powder, a second conductive powder, boron powder, and a sintering agent as needed to mold and sinter the mixture.</p>
申请公布号 WO2013141238(A1) 申请公布日期 2013.09.26
申请号 WO2013JP57817 申请日期 2013.03.19
申请人 KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO 发明人 YAMADA KATSUNORI
分类号 H01C7/04 主分类号 H01C7/04
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