发明名称 METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM
摘要 <p>Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.</p>
申请公布号 WO2013142174(A1) 申请公布日期 2013.09.26
申请号 WO2013US30703 申请日期 2013.03.13
申请人 LAM RESEARCH CORPORATION 发明人 NAM, SANG, KI;DHINDSA, RAJINDER;MARAKHTANOV, ALEXEI
分类号 H05H1/46 主分类号 H05H1/46
代理机构 代理人
主权项
地址