发明名称 |
METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM |
摘要 |
<p>Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.</p> |
申请公布号 |
WO2013142174(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
WO2013US30703 |
申请日期 |
2013.03.13 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
NAM, SANG, KI;DHINDSA, RAJINDER;MARAKHTANOV, ALEXEI |
分类号 |
H05H1/46 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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