| 摘要 |
PROBLEM TO BE SOLVED: To minimize degradation in deposition throughput of the sealing film of an organic EL element, while enhancing the sealing performance of the sealing film.SOLUTION: The organic electronic device includes an organic layer 51 formed on a glass substrate G (anode 50), and a sealing film covering the organic layer 51. The sealing film includes an aCHx film 54 containing a carbon component, and an SiNx film 55 not containing a carbon component. The aCHx film 54 has a first aCHx film 54-1 and a second aCHx film 54-2. The first aCHx film 54-1 is deposited by microwave plasma CVD. The second aCHx film 54-2 is deposited by applying a bias electric field from the high frequency power supply of a microwave plasma processing apparatus, during or after deposition of the aCHx film 54 by microwave plasma CVD, and has a greater number of dangling bonds than the first aCHx film 54-1. |
