| 摘要 |
PROBLEM TO BE SOLVED: To provide a driving method of a semiconductor device.SOLUTION: In a semiconductor device including a bit line, a selection line, a selection transistor, m (m is a natural number equal to or greater than 2) writing word lines, m reading word lines, a source line, and first to m-th memory cells, each memory cell includes a first transistor and a second transistor that holds charge accumulated in a capacitor. The second transistor includes a channel formed in an oxide semiconductor layer. In a driving method of a semiconductor device having the above structure, when writing to a memory cell is performed, the first transistor is turned on so that a first source terminal or a first drain terminal is set to a fixed potential; thus, a potential is stably written to the capacitor. |
