发明名称 METHOD AND SYSTEM FOR DESIGN OF ENHANCED ACCURACY PATTERNS FOR CHARGED PARTICLE BEAM LITHOGRAPHY
摘要 A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. Simulation is used to determine the pattern that will be produced on the surface.
申请公布号 US2013252143(A1) 申请公布日期 2013.09.26
申请号 US201313894349 申请日期 2013.05.14
申请人 D2S, INC. 发明人 FUJIMURA AKIRA;HAGIWARA KAZUYUKI;MEIER STEPHEN F.;BORK INGO
分类号 G06F17/50 主分类号 G06F17/50
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