| 摘要 |
According to one embodiment, a nitride semiconductor device includes a substrate; semiconductor stacked layers including a nitride semiconductor provided on the substrate, and having a buffer layer, a carrier running layer provided on the buffer layer, and a barrier layer provided on the carrier running layer; a source electrode and a drain electrode provided on the semiconductor stacked layers and in contact with the semiconductor stacked layers; and a gate electrode provided on the semiconductor stacked layers and provided between the source electrode and the drain electrode. The gate electrode has a stacked structure, and a gate metal layer, a barrier metal layer, a first interconnection layer, and a second interconnection layer including Al are sequentially stacked from a side of a surface of the semiconductor stacked layers in the stacked structure.
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