发明名称 |
METHOD AND SYSTEM FOR MODIFYING PHOTORESIST USING ELECTROMAGNETIC RADIATION AND ION IMPLANTION |
摘要 |
A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.
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申请公布号 |
US2013247824(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201313888693 |
申请日期 |
2013.05.07 |
申请人 |
EQUIPMENT ASSOCIATES, INC. VARIAN SEMICONDUCTOR;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
GODET LUDOVIC;MARTIN PATRICK M. |
分类号 |
C23C16/50 |
主分类号 |
C23C16/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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