发明名称 METHOD AND SYSTEM FOR MODIFYING PHOTORESIST USING ELECTROMAGNETIC RADIATION AND ION IMPLANTION
摘要 A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.
申请公布号 US2013247824(A1) 申请公布日期 2013.09.26
申请号 US201313888693 申请日期 2013.05.07
申请人 EQUIPMENT ASSOCIATES, INC. VARIAN SEMICONDUCTOR;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 GODET LUDOVIC;MARTIN PATRICK M.
分类号 C23C16/50 主分类号 C23C16/50
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