| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor device which has a large heat radiation area and can be improved in heat releasing efficiency.SOLUTION: A semiconductor device includes a plurality of semiconductor chips 1a, 1b, and 1c which are stacked; through electrodes 14a, 15a, and 16a provided to the respective semiconductor chips 1a, 1b, and 1c; a first connection electrode 17a which is electrically connected to the through electrode 14a on an outside surface of the semiconductor chip 1a; a second connection electrode 18a which is electrically connected to the through electrode 16a on an outside surface of the semiconductor chip 1c; and a third connection electrode 19a which is provided between the semiconductor chips 1b and 1c adjoining each other and is electrically connected to the through electrodes 15a and 16a of the semiconductor chips 1b and 1c. The through electrodes 14a and 15a and the through electrode 16a have a semiconductor material of opposite conductive type from each other. |
