| 摘要 |
PROBLEM TO BE SOLVED: To improve yield while suppressing a cost.SOLUTION: A method for manufacturing a semiconductor device includes the step of forming a via hole 13 containing a first hole 13A and a second hole 13B having an aperture smaller than the first hole from a rear surface side of a semiconductor substrate 1 equipped with a compound semiconductor lamination structure 4 on a front surface side thereof. A via hole formation step includes the steps of: forming the first hole 13A on the semiconductor substrate 1 so that, by dry etching, an etching bottom surface becomes a curved surface, a central portion of the etching bottom surface becomes the compound semiconductor lamination structure 4, and an outer peripheral part of the etching bottom surface becomes the semiconductor substrate 1; and forming the second hole 13B at the compound semiconductor lamination structure 4, by wet etching and with the semiconductor substrate 1 at the outer peripheral part of the etching bottom surface as a mask. |
