SEMICONDUCTOR LASER ELEMENT, METHOD FOR DRIVING THE SAME, AND SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser element of ultra short pulse and ultra high output, capable of emitting a pulse laser beam having higher peak power notwithstanding its simple configuration and structure.SOLUTION: A semiconductor laser element comprises: (A) a laminated structure composed of a first compound semiconductor layer 30 containing an n-type impurity, an active layer 40 having a quantum well structure, and a second compound semiconductor layer 50 containing a p-type impurity; (B) a first electrode 61 electrically connected to the first compound semiconductor layer 30; and (C) a second electrode 62 electrically connected to the second compound semiconductor layer 50. The second compound semiconductor layer 50 is provided with an electron barrier layer 53 having a thickness of not less than 1.5×10m. The second electrode 62 is separated into a first portion 62A and a second portion 62B by an isolation groove 63. The semiconductor laser element is driven by a pulse voltage having a value twice or more of a threshold voltage.