发明名称 METHODS AND APPARATUS RELATED TO A DIODE DEVICE INCLUDING A JFET PORTION
摘要 In one general aspect, an apparatus can include an anode terminal, and a cathode terminal. The apparatus can include a junction field-effect transistor (JFET) portion having a channel disposed within a semiconductor substrate and defining a first portion of an electrical path between the anode terminal and the cathode terminal. The apparatus can also include a diode portion formed within the semiconductor substrate and defining a second portion of the electrical path between the anode terminal and the cathode terminal. The diode portion can be serially coupled to the channel of the JFET device.
申请公布号 US2013248947(A1) 申请公布日期 2013.09.26
申请号 US201213427541 申请日期 2012.03.22
申请人 KIM SUNGLYONG;KIM JONGJIB 发明人 KIM SUNGLYONG;KIM JONGJIB
分类号 H01L27/06;H01L21/8232 主分类号 H01L27/06
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