发明名称 |
METHODS AND APPARATUS RELATED TO A DIODE DEVICE INCLUDING A JFET PORTION |
摘要 |
In one general aspect, an apparatus can include an anode terminal, and a cathode terminal. The apparatus can include a junction field-effect transistor (JFET) portion having a channel disposed within a semiconductor substrate and defining a first portion of an electrical path between the anode terminal and the cathode terminal. The apparatus can also include a diode portion formed within the semiconductor substrate and defining a second portion of the electrical path between the anode terminal and the cathode terminal. The diode portion can be serially coupled to the channel of the JFET device.
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申请公布号 |
US2013248947(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213427541 |
申请日期 |
2012.03.22 |
申请人 |
KIM SUNGLYONG;KIM JONGJIB |
发明人 |
KIM SUNGLYONG;KIM JONGJIB |
分类号 |
H01L27/06;H01L21/8232 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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