发明名称 |
CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE |
摘要 |
A contact structure for a semiconductor device includes a substrate comprising a major surface and a cavity. A bottom surface of the cavity is lower than the major surface. The contact structure also includes a strained material in the cavity, and a lattice constant of the strained material is different from lattice constant of the substrate. The contact structure also includes a first metal layer over the strained material, a dielectric layer over the first metal layer, and a second metal layer over the dielectric layer. The dielectric layer has a thickness ranging from 1 nm to 10 nm.
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申请公布号 |
US2013248927(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213428972 |
申请日期 |
2012.03.23 |
申请人 |
WU CHENG-HSIEN;KO CHIH-HSIN;WANN CLEMENT HSINGJEN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU CHENG-HSIEN;KO CHIH-HSIN;WANN CLEMENT HSINGJEN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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