发明名称 DEPOSITION DEVICE, DEPOSITION METHOD, AND SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a deposition device which improves the yield of obtained products while minimizing design changes of a reaction chamber, a deposition method using the deposition device, and a semiconductor element including a thin film formed by the deposition method.SOLUTION: A deposition device 1 includes: a reaction chamber 10 to which a supply gas is supplied; a substrate holding part 13 holding a substrate S in the reaction chamber 10; and a facing member 18 having a facing surface 181 facing a main surface SF of the substrate S held by the substrate holding part 13 in the reaction chamber 10. In the deposition device 1, the supply gas flows through a space between the main surface SF of the substrate S held by the substrate holding part 13 and a surface of the facing member 18. Further, at least a part of a region on the facing surface 181 of the facing member 18 is processed to form irregularities. The arithmetic average roughness in the region ranges from 1.0 μm to 7.0 μm.
申请公布号 JP2013191768(A) 申请公布日期 2013.09.26
申请号 JP20120057687 申请日期 2012.03.14
申请人 SHARP CORP 发明人 TOZAKI MANABU;YAMAUCHI HIROSHI
分类号 H01L21/205;C23C16/44;H01S5/02 主分类号 H01L21/205
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