发明名称 |
DEPOSITION DEVICE, DEPOSITION METHOD, AND SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a deposition device which improves the yield of obtained products while minimizing design changes of a reaction chamber, a deposition method using the deposition device, and a semiconductor element including a thin film formed by the deposition method.SOLUTION: A deposition device 1 includes: a reaction chamber 10 to which a supply gas is supplied; a substrate holding part 13 holding a substrate S in the reaction chamber 10; and a facing member 18 having a facing surface 181 facing a main surface SF of the substrate S held by the substrate holding part 13 in the reaction chamber 10. In the deposition device 1, the supply gas flows through a space between the main surface SF of the substrate S held by the substrate holding part 13 and a surface of the facing member 18. Further, at least a part of a region on the facing surface 181 of the facing member 18 is processed to form irregularities. The arithmetic average roughness in the region ranges from 1.0 μm to 7.0 μm. |
申请公布号 |
JP2013191768(A) |
申请公布日期 |
2013.09.26 |
申请号 |
JP20120057687 |
申请日期 |
2012.03.14 |
申请人 |
SHARP CORP |
发明人 |
TOZAKI MANABU;YAMAUCHI HIROSHI |
分类号 |
H01L21/205;C23C16/44;H01S5/02 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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