| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of a polycrystal or a twin crystal, when growing a silicon single crystal by dipping a seed crystal into a silicon melt stored in a crucible.SOLUTION: A production method 10 includes: a heat-resistant isolation wall 7 formed cylindrically with upper and lower openings, and enclosing a seed crystal S dipped in a silicon melt M so that its outside wall surface is out of contact with the inside wall surface of a side wall of a container 2; and a moving means 6 for moving the isolation wall 7 in the vertical direction. When the isolation wall 7 is lowered until its lower end is dipped into the silicon melt M, a convection from a peripheral part M1 toward a center part M2 generated in an upper part of the silicon melt M is blocked, to thereby reduce temperature fluctuation at the center part M2. |
