发明名称 |
CREATING DEEP TRENCHES ON UNDERLYING SUBSTRATE |
摘要 |
A semiconductor structure and method of fabricating the same are disclosed. In an embodiment, the structure includes a first substrate having a buried plate or plates in the substrate. Each buried plate includes at least one buried plate contact, and a plurality of deep trench capacitors disposed about the at least one buried plate contact. A first oxide layer is disposed over the first substrate. The deep trench capacitors and buried plate contacts in the first substrate may be accessed for use in a variety of memory and decoupling applications. |
申请公布号 |
US2013249052(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213428004 |
申请日期 |
2012.03.23 |
申请人 |
APPLEYARD JENNIFER E.;BARTH, JR. JOHN E.;DEFORGE JOHN B.;HO HERBERT L.;KHAN BABAR A.;PETERSON KIRK D.;TURNER ANDREW A.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
APPLEYARD JENNIFER E.;BARTH, JR. JOHN E.;DEFORGE JOHN B.;HO HERBERT L.;KHAN BABAR A.;PETERSON KIRK D.;TURNER ANDREW A. |
分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|