| 摘要 |
PROBLEM TO BE SOLVED: To provide: a method for removing a residue on a dry etching stop layer produced through a dry etching process in manufacturing a bottom-gate thin film transistor or the like; and an electronic device which is low in cost and excellent in electrical characteristics.SOLUTION: A non-volatile compound is removed by second dry etching without using hydrocarbon-containing gas and halogen-containing gas, but using hydrogen gas, the non-volatile compound being produced when an indium-containing compound or the like is dry etched using mixed gas that contains hydrocarbon or the like and being deposited on a dry etching stop layer. In addition to hydrogen gas, rare gas may be contained. |
