发明名称 |
METHOD OF FABRICATING NONPOLAR GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, NONPOLAR SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME |
摘要 |
A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N2 and does not contain H2.
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申请公布号 |
US2013248818(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201313848352 |
申请日期 |
2013.03.21 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
CHOI SEUNG KYU;KIM CHAE HON;JUNG JUNG WHAN |
分类号 |
H01L33/00;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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