| 摘要 |
According to one embodiment, a semiconductor memory device includes memory units each includes a first transistor, memory cell transistors, and a second transistor serially coupled between first and second ends. A memory cell transistor of each memory unit has its gate electrode coupled to each other. A bit line is coupled to the first ends. First and second drivers output voltage applied to selected and unselected first transistors, respectively. Third and fourth drivers output voltage applied to selected and unselected second transistors, respectively. A selector couples the gate electrode of the first transistor of each memory unit to the first or second driver, and that of the second transistor of each memory unit to the third or fourth driver.
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