METHOD FOR DRY-CLEANING METAL FILM IN FILM-FORMATION APPARATUS

摘要

Disclosed is a dry-cleaning method for using beta-diketone to remove a metal film adhering to a film-formation apparatus, wherein the method is characterized in that the metal film is removed by being subjected to a reaction with a cleaning gas in a temperature range of 200-400°C, the cleaning gas being a gas containing beta-diketone and NOx (NO and/or N2O). According to this method, etching can continue despite the existence of a temperature differential due to locations where the metal film has adhered.