发明名称 |
SEMICONDUCTOR DEVICE WITH ISOLATION LAYER, ELECTRONIC DEVICE HAVING THE SAME, AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device with an isolation layer buried in a trench includes an interface layer formed on the surface of the trench, a buffer layer formed in the interface layer at a bottom corner of the trench, a liner layer formed over the interface layer, and a gap-fill layer gap-filling the trench over the liner layer. The trench includes a micro-trench formed at the bottom corner thereof, and the buffer layer fills the micro-trench. |
申请公布号 |
US2013249048(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213544411 |
申请日期 |
2012.07.09 |
申请人 |
KIM HYUNG-HWAN;CHOI BONG-HO;LEE JIN-YUL;PYO SEUNG-SEOK |
发明人 |
KIM HYUNG-HWAN;CHOI BONG-HO;LEE JIN-YUL;PYO SEUNG-SEOK |
分类号 |
H01L27/04;H01L21/762 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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