| 摘要 |
<p>Provided are a substrate-processing apparatus and a substrate-processing method. The substrate-processing apparatus includes a chamber, a sheath-gas exhaust line for discharging sheath gas to the outside, a rotatable base plate arranged inside the chamber, a plurality of substrate-supporting units mounted on the base plate so as to support the respective substrates, a plurality of process modules arranged on the upper plate of the chamber so as to face the substrate-supporting units, and a sheath-gas distribution unit mounted on the upper plate so as to form a gas curtain by supplying the sheath gas such that the gas supplied to the predetermined process module is prevented from spreading to the other process modules. Each of the process modules has a process-gas supply unit for supplying process gas.</p> |
