SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To correct the tendency that electric characteristics vary depending on a top surface shape of an oxide semiconductor layer, a top surface shape of a source electrode layer, a top surface shape of a drain electrode layer and positional relationship among the top surface shapes.SOLUTION: A semiconductor device comprises an oxide insulation film provided on a source electrode layer and a drain electrode layer. A circumference of the source electrode layer is arranged on an inner side of a circumference of an oxide semiconductor layer, and a circumference of the drain electrode layer is arranged on an inner side of the circumference of the oxide semiconductor layer, and end faces of the oxide semiconductor layer are covered with the oxide insulation film. The semiconductor device has a layout where a distance between the circumference of the source electrode layer and the circumference of the oxide semiconductor layer is equal to or more than a channel length L, and a layout where a distance between the circumference of the drain electrode layer and the circumference of the oxide semiconductor layer is equal to or more than the channel length L.