| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of suppressing a variation in threshold voltage of a memory cell caused by a distance from a row decoder or a word line driver to the memory cell.SOLUTION: In a memory, a word driver applies any voltage among a pass voltage to be applied to non-selection word lines among a plurality of word lines, a write voltage to be applied to a selection word line among the plurality of word lines, and an intermediate voltage higher than the pass voltage and lower than the write voltage to a word line. A sense amplifier detects data of a memory cell through a bit line. An operation of writing data to a selection memory cell among a plurality of memory cells connected to the selection word line is executed by repeating a write loop for applying voltage to the selection work line and verification for verifying whether the data is written in the selection memory cell. A word line driver applies the pass voltage, the intermediate voltage and the write voltage to the selection word line in each write loop in this order. |
