发明名称 SHIELD PLATE, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 An aspect of the present embodiment, there is provided a shield plate configured to cover a semiconductor substrate including a semiconductor device in which a first semiconductor element and a second semiconductor element are included, in implanting charged particles into the semiconductor substrate to provide a lifetime control layer in the semiconductor substrate, including, an alignment mark configured to align with respect to a semiconductor substrate, a first region configured to cover the first semiconductor element, and a second region configured to cover the second semiconductor element, a thickness of the second region being thinner than a thickness of the first region.
申请公布号 US2013249063(A1) 申请公布日期 2013.09.26
申请号 US201313786152 申请日期 2013.03.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIBATA HIRONOBU;HAMADA ETSUO
分类号 H01L23/552;H01L21/326 主分类号 H01L23/552
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