| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, containing a nonvolatile memory capable of continuously reading for many years after rewriting many times at a high temperature.SOLUTION: An EEPROM memory includes a matrix of memory cells constituted of row and column. Each of the memory cells includes a memory transistor containing a floating gate and a control gate, and, in series to the same, a selection transistor having a selector gate. The control gates of a plurality of memory transistors are connected to control gate lines respectively, and the selector gate of the selection transistor is connected to a word line 13 respectively. The plurality of selection transistors are connected to each other by a common source line. Since two power sources, or Vppb and 2 V, are added, a potential difference |VGB| between gate and Bulk can be controlled to be 2 V or less. |
