| 摘要 |
Provided is a sample preparation method, including: processing a sample by an ion beam, thereby forming a thin film portion having a thickness that allows an electron beam to transmit therethrough; supplying deposition gas to the thin film portion; and irradiating the thin film portion with the electron beam, thereby forming a deposition film on a front surface of the thin film portion and a deposition film on a rear surface of the thin film portion opposed to the front surface.
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