DRIVING METHOD OF SEMICONDUCTOR STORAGE DEVICE AND SEMICONDUCTOR STORAGE DEVICE

摘要

A memory includes storage elements, a signal holding part and a sense amplifier. A driving-method includes a read operation for reading target data stored in a first storage element of the storage elements. In the read operation, the signal holding part holds a first voltage according to the target data. First sample data of a first logic is written to the first storage element. The signal holding part holds a second voltage according to the first sample data. Second sample data of a second logic opposite to the first logic is written to the first storage element. The signal holding part holds a third voltage according to the second sample data. The sense amplifier compares a read signal based on the first voltage with a reference signal generated based on the second and third voltages to detect a logic of the target data stored in the first storage element.