| 摘要 |
A semiconductor device having: a semiconductor element mounted on a substrate; an electrode pad provided on the semiconductor element and having aluminum as the main component thereof; a copper wire connecting a connection terminal provided on the substrate and the electrode pad, and having copper as the main component thereof; and a sealing resin that seals the semiconductor element and the copper wire. A barrier layer including a metal selected from either palladium or platinum is formed at a joining section between the copper wire and the electrode pad when this semiconductor device is heated for 16 hours at atmospheric temperature of 200°C. |
