MULTI-CRUCIBLE SILICON INGOT GROWING APPARATUS

摘要

A silicon ingot growing apparatus according to one embodiment of the present invention comprises: a furnace providing an interior space in which an ingot is grown; one or more center heaters positioned in the interior space of the furnace so as to divide the interior space into a plurality of areas; a plurality of crucibles, each of which is arranged in each of the plurality of the areas, each accommodating feedstock; single-crystal seeds each of which is tightly fixed to an inner wall of each of the crucibles; and a plurality of side heaters disposed along the side walls of the furnace so as to surround, along with the center heater, each crucible.