METHOD OF FABRICATING NON-POLAR GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, NONPOLAR SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME

摘要

A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N2 and does not contain H2. By cutting off the supply of H2, anisotropic etching on the substrate growth surface is prevented, leading to an improvement in the surface morphology of the gallium nitride layer.