发明名称 |
METHOD FOR PRODUCING HIGH-PURITY LANTHANUM, HIGH-PURITY LANTHANUM, SPUTTERING TARGET FORMED FROM HIGH-PURITY LANTHANUM, AND METAL GATE FILM HAVING HIGH-PURITY LANTHANUM AS MAIN COMPONENT |
摘要 |
The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-5N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700°C to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component. |
申请公布号 |
KR20130105921(A) |
申请公布日期 |
2013.09.26 |
申请号 |
KR20137021872 |
申请日期 |
2012.01.17 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
TAKAHATA MASAHIRO;SATOH KAZUYUKI;NARITA SATOYASU;GOHARA TAKESHI |
分类号 |
C22B59/00;C22B9/22;C23C14/34;H01L21/28 |
主分类号 |
C22B59/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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