| 摘要 |
Dopant source gas supply arrangements and methods are described, wherein one or more dopant source gas supply vessels is contained inside an outer enclosure of an ion implantation system, e.g., in a gas box within such enclosure. In one implementation, a dopant source gas supply vessel is positioned in remote relationship to the gas box of the ion implantation system, with a dopant source gas local vessel in the gas box, and a supply line interconnecting the dopant source gas supply vessel in supply relationship to the dopant source gas local vessel, in which the supply line is adapted to flow dopant source gas from the supply vessel to the local vessel only when the ion implantation system is in a non-operational state, and to be evacuated or filled with an inert pressurized gas when the ion implantation system is in an operational state.
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