METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING DUAL GATE DIELECTRIC LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device including a dual gate insulation layer is provided to prevent the degradation of the reliability of the semiconductor device which includes gate insulation layers with different thicknesses on a high voltage area and a low voltage area. CONSTITUTION: A substrate (110) including a first area and a second area is provided. A first gate insulation layer (130) with a first thickness is formed on the substrate. An interlayer dielectric layer (140) including a first trench and a second trench is formed on the substrate. A second gate insulation layer (180) is formed on the bottom of the first trench of the first area. A high dielectric material (185) is formed on the first and second gate insulating layers. A gate electrode (192) is formed in the first trench and the second trench by planarizing the high dielectric material.