INSULATING FILM MATERIAL FOR SEMICONDUCTOR DEVICE AND METHOD FOR PREPARING INSULATING FILM USING THE SAME

摘要

PURPOSE: An insulation film material for a semiconductor device and a method for manufacturing an insulation film using the same are provided to improve mechanical properties and a high dielectric by coating a substrate with a coating solution including cyclosiloxane. CONSTITUTION: A coating solution including cyclosiloxane is coated on a substrate. An insulation film is manufactured by thermally processing a film which is formed with the coating solution at 100 to 150 degrees centigrade. A coating process is performed by a spin coating method, a spray coating method, a deep coating method, an inkjet printing method, or a direct patterning method. The substrate is a polymer substrate or a silicon substrate. The coating solution further includes a cross-linker.