| 摘要 |
A nanotubular MOSFET device and a method of fabricating the same are used to extend device scaling roadmap while maintaining good short channel effects and providing competitive drive current. The nanotubular MOSFET device includes a concentric tubular inner (61) and outer gate (50) separated from each other by a tubular shaped epitaxially grown silicon layer, and a source (35) and drain (31) respectively separated by spacers (51, 41) surrounding the tubular inner and outer gates. The method of forming the nanotubular MOSFET device includes: forming on a substrate a cylindrical shaped Si layer (30); forming an outer gate surrounding the cylindrical Si layer (30) and positioned between a bottom spacer (41) and a top spacer (51); growing a silicon epitaxial layer on the top spacer adjacent to a portion of the cylindrical shaped Si layer; etching an inner portion of the cylindrical shaped Si forming a hollow cylinder; forming an inner spacer at the bottom of the inner cylinder; forming an inner gate by filling a portion of the hollow cylinder; forming a sidewall spacer adjacent to the inner gate; and etching a deep trench for accessing and contacting the outer gate and drain. |
