发明名称 |
CURRENT INDUCED MAGNETORESISTANCE DEVICE |
摘要 |
<p>Provided is a current induced switching magnetoresistance device comprising a magnetic multilayer composed of a first ferromagnetic layer, a nonferromagnetic layer, and a second ferromagnetic layer, wherein the first ferromagnetic layer has an upper electrode, the second ferromagnetic layer pinned by an antiferromagnet, wherein the antiferromagnet contains a lower electrode at its lower part, and the second ferromagnetic layer is embedded with a nano oxide layer. It is preferable to have at least a part of the lower electrode in contact with the second ferromagnetic layer. The magnetoresistance device provides a lower critical current (Ic) for the magnetization reversal and has an increased resistance.</p> |
申请公布号 |
EP1810354(B1) |
申请公布日期 |
2013.09.25 |
申请号 |
EP20050817613 |
申请日期 |
2005.10.28 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
SHIN, KYUNG-HO;HOANG YEN, NGUYEN, THI;YI, HYUN-JUNG |
分类号 |
H01L43/08;G11C11/15;H01F10/32 |
主分类号 |
H01L43/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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