发明名称 IMPROVED SIMULTANEOUS MULTIPLE ION IMPLANTATION PROCESS AND APPARATUS SEMICONDUCTOR STRUCTURE MADE USING SAME
摘要 <p>Methods and apparatus provide for: a first source of plasma (first plasma), which includes a first species of ions, directing the first plasma out along a first axis; a second source of plasma (second plasma), which includes a second, differing, species of ions, directing the second plasma out along a second axis; and an accelerator system in communication with the first and second sources of plasma, and operating to: (i) accelerate the first species of ions at a first magnitude therethrough, and toward a semiconductor wafer, and (ii) simultaneously accelerate the second species of ions at a second magnitude, different from the first magnitude, therethrough, and toward the semiconductor wafer.</p>
申请公布号 EP2641259(A1) 申请公布日期 2013.09.25
申请号 EP20110794276 申请日期 2011.11.15
申请人 CORNING INCORPORATED 发明人 CHEREKDJIAN, SARKO
分类号 H01J37/317;H01J37/30;H01L21/265 主分类号 H01J37/317
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