| 摘要 |
A plasma etching method and a plasma etching apparatus are provided to quickly etch away pollutants on a rear surface of a semiconductor substrate by performing the etching process on various surfaces of the semiconductor substrate in the same space. A plasma etching apparatus includes a process chamber(10), a lower electrode(21), a support member(25), an upper electrode(30), and an inverting unit(60). A substrate treating process is performed in the process chamber. The lower electrode is arranged inside the process chamber and generates plasma. The support member supports an edge portion of the substrate, while the substrate is displaced apart from the lower electrode. The upper electrode faces the lower electrode. The inverting unit inverts the unit. The inverting unit is contained in a load-lock chamber, which is arranged to be adjacent to the process chamber. |
