SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a conductive pattern or a substrate from being etched and to prevent a conductive material from being oxidized due to a nitride pattern. CONSTITUTION: A substrate (100) includes a device isolation pattern (102) which limits an active pattern (104). A first impurity area (116a) and a second impurity area (116b) are formed on the active patterns which are formed on both sides of a gate electrode. The first impurity area includes a recess area which is lower than the upper surface of the substrate. A bit line (135) crosses the gate electrode. A first contact (125) electrically connects the first impurity area to the bit line. A first nitride pattern (148) is arranged on the lower lateral surface of the first contact.