SEMICONDUCTOR DEVICE HAVING JUNCTIONLESS VERTICAL GATE TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device including a vertical gate transistor without a junction and a manufacturing method thereof are provided to improve productivity by implanting one impurity to a source, a drain, and a body without the complexity of an impurity implantation process. CONSTITUTION: An active pillar (120) vertically protrudes from a substrate (110). The active pillar includes a first impurity region (120a), a second impurity region (120b), and a third impurity region (120c). The second impurity region is interposed between the first impurity region and the second impurity region. The first to third impurity regions include impurities with the same polarities. A gate electrode (160) is formed on the sidewall of the second impurity region. A bit line crosses the gate electrode and comes into contact with the first impurity region.