发明名称 TEST CIRCUIT, MEMORY SYSTEM AND TEST METHOD OF MEMORY SYSTEM
摘要 This technology relates to smoothly performing a test on a memory circuit having a high memory capacity while reducing the size of a test circuit. A test circuit according to the present invention includes a test execution unit configured to perform a test on a target test memory circuit, an internal storage unit configured to store data for the test execution unit, and a conversion setting unit configured to set a part of or the entire storage space of the target test memory circuit as an external storage unit for storing the data for the test execution unit.
申请公布号 KR20130104732(A) 申请公布日期 2013.09.25
申请号 KR20120026508 申请日期 2012.03.15
申请人 SK HYNIX INC. 发明人 YANG, HYUNG GYUN;LEE, HYUNG DONG;KWON, YONG KEE;MOON, YOUNG SUK;KIM, HONG SIK
分类号 G11C29/00 主分类号 G11C29/00
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